Title :
Thin nickel films growth using plasma enhanced atomic layer deposition from η3-2-methylallyl N, N´-diisopropylacetamidinate nickel(II)
Author :
Yokota, Jiro ; Lansalot, Clement ; Changhee Ko
Author_Institution :
Air Liquide Labs., Tsukuba, Japan
Abstract :
Plasma enhanced atomic layer deposition (PEALD) using the novel η3-2-methylallyl N,N´-diisopropylacetamidinate nickel(II) precursor has been investigated. NH3 has been selected as the most appropriate co-reactant for the depositions. (PE)ALD saturations were observed at 200°C and 300 °C, with a deposition rate of 1.0 Å/cycle and 1.2Å/cycle respectively. No incubation time was observed with linear film growth at 300°C. Deposition on SiO2 patterned wafer was performed and SEM image analysis showed good step coverage of close to 100%. H2 anneal post treatment allowed to obtain very pure nickel film and resistivities value down to 9μΩ·cm, close to the resistivity value of bulk nickel (5-10μΩ·cm) [1].
Keywords :
annealing; atomic layer deposition; electrical resistivity; metallic thin films; nickel; plasma deposition; scanning electron microscopy; η3-2-methylallyl N,N´-diisopropylacetamidinate nickel(II) precursor; H2 anneal post treatment; Ni; PEALD; SEM image analysis; SiO2 patterned wafer; electrical resistivity; plasma enhanced atomic layer deposition; temperature 200 degC; temperature 300 degC; thin nickel film growth; Atomic layer deposition; Conductivity; Films; Nickel; Plasmas; Silicides; Silicon;
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
DOI :
10.1109/IITC.2013.6615573
