DocumentCode
3280535
Title
Endpoint detection using optical emission spectroscopy in TSV fabrication
Author
Ja Myung Gu ; Thadesar, Paragkumar A. ; Dembla, Ashish ; Sang Jeen Hong ; Bakir, Muhannad S. ; May, Gary S.
Author_Institution
Dept. of Electron. Eng., Myongji Univ., Yongin, South Korea
fYear
2013
fDate
13-15 June 2013
Firstpage
1
Lastpage
3
Abstract
A hybrid partial least squares-support vector machine (PLS-SVM) model of optical emission spectroscopy data is proposed and successfully demonstrated to predict the endpoint detection of through silicon vias (TSVs) etched using the Bosch process. Accurate results are shown for TSVs with diameters of 80 μm and 25 μm.
Keywords
etching; least squares approximations; support vector machines; three-dimensional integrated circuits; Bosch process; TSV fabrication; endpoint detection; hybrid partial least squares support vector machine model; optical emission spectroscopy; size 25 mum; size 80 mum; through silicon vias; Etching; Optical device fabrication; Silicon; Smoothing methods; Stimulated emission; Support vector machines; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0438-9
Type
conf
DOI
10.1109/IITC.2013.6615575
Filename
6615575
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