• DocumentCode
    3280568
  • Title

    Influence of thickness on structural and optical properties of evaporated SnS films

  • Author

    Cheng, Shuying ; Zhang, Hong

  • Author_Institution
    Inst. of Micro-Nano Devices & Solar Cells, Fuzhou Univ., Fuzhou, China
  • fYear
    2011
  • fDate
    20-23 Feb. 2011
  • Firstpage
    154
  • Lastpage
    157
  • Abstract
    SnS films with thicknesses of 65-580 nm have been deposited on glass substrates by thermal evaporation. The physical properties of the films were investigated using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible-near infrared spectroscopy measurements at room temperature. It indicates that the deposited films mainly exhibit SnS phase, but they contain tiny SnO2. The deposited SnS films are pinhole free, smooth and strongly adherent to the surface of the substrate. With the increase of the film thickness from 65 nm to 580 nm, the color of the SnS films changes from brown to dark brown to grey, and the grains of the films become larger and larger, and the direct bandgap and indirect bandgap decrease. All the films have larger direct bandgap of 1.55 - 2.30 eV, which is much larger than 1.3 eV of bulk SnS, and indirect bandgap of 1.10 - 1.29 eV.
  • Keywords
    X-ray diffraction; glass; infrared spectroscopy; optical properties; scanning electron microscopy; solar cells; substrates; tin compounds; ultraviolet spectroscopy; visible spectroscopy; SnS; X-ray diffraction; electron volt energy 1.1 eV to 1.29 eV; electron volt energy 1.55 eV to 2.3 eV; evaporated SnS films; glass substrates; optical properties; physical properties; room temperature; scanning electron microscopy; size 65 nm to 580 nm; structural properties; thermal evaporation; ultraviolet-visible-near infrared spectroscopy measurements; Optical diffraction; Optical films; Optical reflection; Silicon; SnS films; optical properties; thermal evaporation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-61284-775-7
  • Type

    conf

  • DOI
    10.1109/NEMS.2011.6017318
  • Filename
    6017318