DocumentCode :
3280584
Title :
Terahertz generation with an 830 nm all semiconductor femtosecond laser system
Author :
Jördens, C. ; Schlauch, T. ; Li, M. ; Hofmann, M.R. ; Bieler, M. ; Koch, M.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Braunschweig, Braunschweig
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
We present a THz time-domain spectrometer based on an 830 nm all semiconductor femtosecond laser system. Optical pulses with durations of less than 600 fs are used to gate standard LT-GaAs antennas. We achieve a signal to noise ratio of more than 40 dB in intensity and a bandwidth of 1.4 THz. Simulations based on the Drude-Lorentz model show a good agreement with the measured THz signals. Spectroscopic data on polymeric compounds and first THz images taken with our system will be presented as well.
Keywords :
high-speed optical techniques; optical polymers; semiconductor lasers; terahertz spectroscopy; terahertz wave generation; Drude-Lorentz model; THz time-domain spectrometer; polymeric compounds; semiconductor femtosecond laser system; standard LT-GaAs antennas; terahertz generation; wavelength 830 nm; Antenna measurements; Bandwidth; Laser modes; Laser noise; Optical pulses; Semiconductor lasers; Signal to noise ratio; Spectroscopy; Time domain analysis; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665827
Filename :
4665827
Link To Document :
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