Electrical properties of multilayer graphene interconnects prepared by chemical vapor deposition

Author

Katagiri, Masayuki ; Miyazaki, H. ; Yamazaki, Yasuyuki ; Li Zhang ; Matsumoto, Tad ; Wada, Masaki ; Kajita, Akihiro ; Sakai, Tadashi

Author_Institution

Low-power Electron. Assoc. & Project (LEAP), Kawasaki, Japan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

We fabricate multilayer graphene interconnects with 100-nm-class line widths. Multilayer graphene is grown on a Ni catalyst layer using remote plasma-enhanced chemical vapor deposition (CVD) at a low temperature of 600°C and transferred onto a SiO₂/Si substrate after exfoliation from the Ni layer. The sheet resistance of the CVD graphene interconnects is as low as 500 Ω sq. The temperature dependence of resistance reveals that the CVD graphene exhibits half-metallic transport properties.

Keywords

catalysts; graphene; nickel; plasma CVD; silicon compounds; Ni; SiO₂-Si; catalyst layer; electrical properties; half metallic transport properties; multilayer graphene interconnects; remote plasma enhanced chemical vapor deposition; sheet resistance; size 100 nm; temperature 600 degC; temperature dependence; Graphene; Nickel; Nonhomogeneous media; Plasma temperature; Resistance; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615580

Filename

6615580