Numerical simulations of high heat dissipation technology in LSI 3-D packaging using carbon nanotube through silicon via (CNT-TSV) and thermal interface material (CNT-TIM)

Author

Kawanabe, Takashi ; Kawabata, Akio ; Murakami, Toshiyuki ; Nihei, Mizuhisa ; Awano, Yuji

Author_Institution

Keio Univ., Yokohama, Japan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

We report numerical simulations of heat dissipation properties of nano-carbon through silicon via (TSV), thermal interface material (TIM), and chip package towards a high heat dissipation LSI 3-D packaging. By using vertically aligned multi-walled CNTs (MWNTs) as both TSV and TIM materials and graphite as chip package, a boundary temperature just under a heat source decreased 40.8K in total, comparing to that using conventional materials. This result suggests superior heat dissipation properties of nano-carbon 3-D packaging.

Keywords

carbon nanotubes; cooling; graphite; integrated circuit packaging; large scale integration; numerical analysis; three-dimensional integrated circuits; C; CNT-TIM; CNT-TSV; LSI 3D packaging; MWNT; carbon nanotube through silicon via; chip packaging; graphite; heat source; high heat dissipation technology; nanocarbon 3D packaging; nanocarbon through silicon via property; numerical simulation; temperature 40.8 K; thermal interface material; vertically aligned multiwalled CNT; Heating; Packaging; Silicon; Solid modeling; Substrates; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615581

Filename

6615581