Development of sputtering technology of Ta2O5/TaOx stacked film for ReRAM mass-production

Author

Fukuda, Nobuko ; Fukuju, Kazunori ; Nishioka, Y. ; Suu, Koukou

Author_Institution

Inst. of Semicond. & Electron. Technol., ULVAC Inc., Shizuoka, Japan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

This paper deals with development of sputtering technology of Ta₂O₅/TaO_x stacked film for ReRAM mass-production. Thickness of TaO_x film deposited by sputtering process is possible to obtain with good uniformity. However, if a high deposition rate is required for mass production, it is very difficult to obtain good controllability and uniformity of TaO_x film. These problems affect the switching characteristics of the ReRAM. In order to solve these problems, sputtering tool and process for ReRAM mass-production are developed. We report the result of TaO_x film with good resistance uniformity and controllability and deposition stability without low deposition rate. Moreover, switching characteristics of Pt/Ta₂O₅/TaO_x/Pt-ReRAM-cells are evaluated.

Keywords

electrical resistivity; mass production; random-access storage; sputter deposition; switching; tantalum compounds; thin films; Pt-Ta₂O₅-TaO_x-Pt; ReRAM mass-production; deposition rate; film thickness; resistance random access memory; resistance uniformity; sputtering technology; switching characteristics; Controllability; Films; Resistance; Silicon; Sputtering; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615582

Filename

6615582