Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model

Author

Lin, Wei-Cheng ; Du, Long-Jei ; King, Ya-Chin

Author_Institution

Dept. ofElectrical Eng., Nat. Tsing-Hua Univ., Hsin-Chu, Taiwan

fYear

2004

fDate

6-8 June 2004

Firstpage

387

Lastpage

390

Abstract

A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model, describing the device degradation under hot-carrier stress is proposed. Combining with the original model, predicting device characteristic changes under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreement with both DC and AC characteristics. In addition, the reliability of a mixed-mode Gilbert cell mixer is investigated and analyzed.

Keywords

CMOS integrated circuits; MMIC mixers; hot carriers; integrated circuit modelling; integrated circuit reliability; mixed analogue-digital integrated circuits; CMOS technology; FN stressing; Gilbert cell mixer; circuit-level reliability; hot-carrier stressed device degradation model; mixed-mode mixer; mixer reliability evaluation; CMOS technology; Circuit simulation; Degradation; Hot carriers; Integrated circuit reliability; Integrated circuit technology; Predictive models; Radio frequency; Semiconductor device modeling; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320630

Filename

1320630