UV cure impact on robust low-k with sub-nm pores and high carbon content for high performance Cu/low-k BEOL modules

Author

Inoue, Naoko ; Ito, Fumihiko ; Shobha, H. ; Gates, S. ; Ryan, E.T. ; Virwani, Kumar ; Klvmko, N. ; Madan, A. ; Tai, Li-Heng ; Adams, E. ; Cohen, Sholom ; Liniger, E. ; Hu, C.-K. ; Mignot, Yann ; Grill, A. ; Spooner, T.

Author_Institution

Renesas Electron., Albany Nanotech, Albany, NY, USA

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

UV cure on robust low-k with sub-nm pore and high carbon content (R-ELK=Robust ELK) was studied to enhance the modulus of the film. UV cure helps to create Si-CH₂-Si bridging bond, which plays a role to enhance the modulus. UV cure does not affect the advantage of low PID (plasma-induced damage) and it was confirmed by C_int (interconnect capacitance) measurement for 80 nm pitch interconnect. Besides, UV cured R-ELK demonstrated high TDDB and EM reliability, with lifetime similar to the mature ULK baseline. High TDDB reliability with further dimensional scaling was also confirmed for the test structure with 20 nm spacing.

Keywords

carbon; carbon compounds; copper; curing; electric breakdown; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; silicon; EM reliability; Si-CH₂-Si; TDDB reliability; UV curing; bridging bond; carbon content; dimensional scaling; interconnect capacitance measurement; low-k BEOL modules; plasma-induced damage; robust ELK; size 80 nm; time dependent dielectric breakdown; Capacitance; Carbon; Films; Market research; Reliability; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615590

Filename

6615590