Title :
A GaAs-based 3-40 GHz distributed mixer with cascode FET cells
Author :
Ko, Won ; Kwon, Youngwoo
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A broadband MMIC distributed mixer with cascode FET cells was developed using commercial GaAs PHEMT foundry. The fabricated distributed mixer with a size of 1.8 mm×1.0 mm showed a high conversion gain of 3.6 dB±0.5 dB over 3 to 40 GHz RF frequency ranges at the low LO power level of 5 dBm with a fixed IF frequency of 1 GHz. An average single-sideband noise figure was 11.7 dB without IF post amplification. The LO-to-IF and LO-to-RF isolations were better than 19 dB over the entire operating frequency band. To our knowledge, this corresponds to the highest gain-bandwidth product (85 GHz) achieved from the wideband mixers.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MMIC; gallium arsenide; integrated circuit measurement; integrated circuit noise; 1.0 mm; 1.8 mm; 11.7 dB; 3 to 40 GHz; 3.1 to 4.1 dB; GaAs; GaAs PHEMT foundry; GaAs-based distributed mixer; IF post amplification; LO power level; LO-to-IF isolations; LO-to-RF isolations; RF frequency ranges; average single-sideband noise figure; broadband MMIC distributed mixer; cascode FET cells; conversion gain; fixed IF frequency; gain-bandwidth product; mixer size; operating frequency band; wideband mixers; FETs; Foundries; Frequency conversion; Gallium arsenide; MMICs; Mixers; Noise figure; PHEMTs; Radio frequency; Wideband;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320638
