Title :
A CMOS quad-band-ΣΔ-transceiver for GSM-EDGE with dual mode transmitter architecture for low noise and high linearity
Author :
Simon, Martin ; Weigel, Robert ; Neurauter, Burkhard ; Marzinger, Gunther
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A 120 nm CMOS quad-band transceiver for GSM EDGE with a dual mode transmitter architecture and a constant gain direct conversion receiver has been developed. In GMSK mode, a direct conversion transmitter with third order ΣΔ-modulation loop modulates the phase of the VCO. The output signal is amplified by a low noise power efficient limiting output buffer with 6 dBm output power. A high linearity vector modulator is switched on to process the 8-PSK modulated EDGE signal with additional amplitude modulation. Neither TX-SAW nor third harmonic filter are needed for system integration into a handset to fulfil the GSM-EDGE specification.
Keywords :
CMOS integrated circuits; amplitude modulation; buffer circuits; cellular radio; integrated circuit measurement; integrated circuit noise; minimum shift keying; mobile handsets; phase modulation; phase shift keying; sigma-delta modulation; transceivers; voltage-controlled oscillators; 120 nm; CMOS quad-band-ΣΔ-transceiver; GMSK mode; GSM-EDGE; PSK modulated EDGE signal; VCO phase modulation; amplitude modulation; constant gain direct conversion receiver; direct conversion transmitter; dual mode transmitter architecture; handset system integration; high linearity vector modulator; low noise power efficient limiting output buffer; output power; output signal amplification; third order ΣΔ-modulation loop; Amplitude modulation; GSM; Harmonic filters; Linearity; Phase modulation; Power generation; Signal processing; Transceivers; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320644
