DocumentCode :
3280994
Title :
Graphene interconenets selectively grown on catalytic metal damascene structure and its growth mechanism on Ni catalyst
Author :
Wada, Masaki ; Ishikura, Taishi ; Nishide, Daisuke ; Ito, Ban ; Yamazaki, Yasuyuki ; Saito, Takashi ; Isobayashi, Atsunobu ; Kagaya, M. ; Matsumoto, Tad ; Kitamura, Masayuki ; Sakata, A. ; Watanabe, Manabu ; Sakuma, Naoshi ; Kajita, Akihiro ; Sakai, Tadas
Author_Institution :
Low-power Electron. Assoc. & Project (LEAP), Tsukuba, Japan
fYear :
2013
fDate :
13-15 June 2013
Firstpage :
1
Lastpage :
3
Abstract :
The present work investigated the possibility of the formation of graphene interconnects and studied the behavior of graphene growth in wiring structure. Graphene nucleated on the facet of catalytic metal, and multi layer graphene grew along the terrace surface of catalytic metal. Selective graphene growth served the stacked interconnects structure of graphene / Ni catalytic metal.
Keywords :
catalysts; chemical vapour deposition; graphene; nickel; semiconductor device metallisation; semiconductor growth; Ni; catalyst; catalytic metal damascene structure; graphene interconnects; growth mechanism; multilayer graphene; selective graphene growth; Graphene; Nickel; Plasmas; Rough surfaces; Surface roughness; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-0438-9
Type :
conf
DOI :
10.1109/IITC.2013.6615599
Filename :
6615599
Link To Document :
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