DocumentCode
3281059
Title
Intercalated multi-layer graphene grown by CVD for LSI interconnects
Author
Kondo, Daishi ; Nakano, Hisamatsu ; Bo Zhou ; Kubota, Ichiro ; Hayashi, K. ; Yagi, Keita ; Takahashi, Masaharu ; Sato, Mitsuhisa ; Sato, Seiki ; Yokoyama, Naoki
Author_Institution
Collaborative Res. Team Green Nanoelectron. Center (GNC), AIST, Tsukuba, Japan
fYear
2013
fDate
13-15 June 2013
Firstpage
1
Lastpage
3
Abstract
We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.
Keywords
chemical vapour deposition; electrical resistivity; graphene; integrated circuit interconnections; integrated circuit reliability; large scale integration; C-Co; CVD; Co; LSI interconnects; chemical vapor deposition; epitaxial Co film; intercalated multilayer graphene; reliability; resistivity; Conductivity; Films; Graphene; Scanning electron microscopy; Substrates; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference (IITC), 2013 IEEE International
Conference_Location
Kyoto
Print_ISBN
978-1-4799-0438-9
Type
conf
DOI
10.1109/IITC.2013.6615600
Filename
6615600
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