• DocumentCode
    3281059
  • Title

    Intercalated multi-layer graphene grown by CVD for LSI interconnects

  • Author

    Kondo, Daishi ; Nakano, Hisamatsu ; Bo Zhou ; Kubota, Ichiro ; Hayashi, K. ; Yagi, Keita ; Takahashi, Masaharu ; Sato, Mitsuhisa ; Sato, Seiki ; Yokoyama, Naoki

  • Author_Institution
    Collaborative Res. Team Green Nanoelectron. Center (GNC), AIST, Tsukuba, Japan
  • fYear
    2013
  • fDate
    13-15 June 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We have fabricated multi-layer graphene (MLG) wiring and demonstrated a resistivity of the same order as Cu and reliability better than Cu. The MLG was synthesized epitaxially by chemical vapor deposition (CVD) on an epitaxial Co film, resulting in quality and electrical properties as good as those of a graphite crystal. The MLG was further intercalated with FeCl3 to achieve a resistivity as low as 9.1 μΩ cm. Our results show that intercalated MLG is really promising for future LSI interconnects.
  • Keywords
    chemical vapour deposition; electrical resistivity; graphene; integrated circuit interconnections; integrated circuit reliability; large scale integration; C-Co; CVD; Co; LSI interconnects; chemical vapor deposition; epitaxial Co film; intercalated multilayer graphene; reliability; resistivity; Conductivity; Films; Graphene; Scanning electron microscopy; Substrates; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2013 IEEE International
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4799-0438-9
  • Type

    conf

  • DOI
    10.1109/IITC.2013.6615600
  • Filename
    6615600