Fabrication and characterization of 100-nm wide silicon nanocantilevers using top-down approach

Author

Guillon, Samuel ; Saya, Daisuke ; Mazenq, Laurent ; Nicu, Liviu ; Perisanu, Sorin ; Vincent, Pascal

Author_Institution

LAAS-CNRS, Univ. of Toulouse, Toulouse, France

fYear

2011

fDate

20-23 Feb. 2011

Firstpage

258

Lastpage

261

Abstract

We present fabrication and characterization of silicon nanocantilevers as nano electromechanical systems (NEMS). We fabricated silicon nanocantilever using silicon on insulator (SOI) wafer by employing stepper UV lithography, which permits resolution of 100 nm. The nanocantilevers were driven by electrostatic force with approaching tungsten tip inside a scanning electron microscope (SEM). Both lateral and vertical resonance frequencies were visually detected with the SEM and compared with analytical results.

Keywords

cantilevers; nanoelectromechanical devices; nanofabrication; scanning electron microscopy; silicon-on-insulator; ultraviolet lithography; NEMS; SEM; SOI wafer; Si; electrostatic force; lateral resonance frequency; nanoelectromechanical system; scanning electron microscope; silicon on insulator wafer; size 100 nm; stepper UV lithography; top-down approach; tungsten tip; vertical resonance frequency; wide silicon nanocantilever fabrication; Clamps; Frequency measurement; Lithography; Nanoelectromechanical systems; Resonant frequency; Scanning electron microscopy; Silicon; NEMS; UV stepper photo repeater; nanomechanical resonator; silicon nanocantilever;

fLanguage

English

Publisher

ieee

Conference_Titel

Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on

Conference_Location

Kaohsiung

Print_ISBN

978-1-61284-775-7

Type

conf

DOI

10.1109/NEMS.2011.6017343

Filename

6017343