Carbon nanotube vias fabricated at back-end of line compatible temperature using a novel CoAl catalyst

Author

Vollebregt, Sten ; Schellevis, H. ; Beenakker, Kees ; Ishihara, Ryoichi

Author_Institution

Delft Inst. of Microsyst. & Nanotechnol., Delft Univ. of Technol., Delft, Netherlands

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

Vertically aligned carbon nanotubes (CNT) were fabricated using a novel CoAlcatalyst at substrate temperatures as low as 350°C and analysed using Raman spectroscopy. Electrical measurement structures were fabricated and characterized using CNT bundles grown at 400°C. The resulting I-V characteristics display a slight non-linearity, likely due to a nonoptimal top contact. The first measurement results indicate CoAl can be an attractive candidate for back-end integration of CNT.

Keywords

Raman spectroscopy; aluminium alloys; carbon nanotubes; catalysts; cobalt alloys; semiconductor growth; CoAl; Raman spectroscopy; back end of line compatible temperature; carbon nanotube vias; catalyst; electrical measurement structures; nonoptimal top contact; temperature 400 degC; vertically aligned carbon nanotubes; Carbon nanotubes; Coal; Integrated circuit interconnections; Iron; Plasma temperature; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615602

Filename

6615602