Title :
Plasma wave terahertz electronics
Author_Institution :
ECSE, Rensselaer Polytech. Inst., Troy, NY
Abstract :
The frequencies of plasma waves (i.e. waves of electron density) in short channel field effect transistors (FETs) lie in terahertz (THz) range. Excitation, instability, and rectification of plasma waves enable a new generation of THz electronics promising to bridge the famous terahertz gap.
Keywords :
millimetre wave field effect transistors; plasma density; plasma instability; plasma waves; rectification; terahertz wave generation; electron density; plasma instability; plasma wave terahertz electronics; plasma waves frequency; rectification; short channel field effect transistors; terahertz gap; CMOS technology; Electron mobility; FETs; Frequency; Gallium nitride; Physics; Plasma temperature; Plasma waves; Radiation detectors; Silicon;
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
DOI :
10.1109/ICIMW.2008.4665864
