Title :
A 0.18 μm SiGe BiCMOS UHF VCO with auto tuning for DCT AMPS and CDMA application
Author :
Lee, Chang-Hyeon ; Ali, Akbar ; Lloyd, Stephen
Author_Institution :
Skyworks Solutions Inc, Irvine, CA, USA
Abstract :
This paper presents a 1.3 GHz fully integrated differential LC VCO with ±20% tuning range (1.0 to 1.7 GHz: including coarse and fine tuning) and tank quality factor of 6 using differential spiral inductor. The measured phase noise at 60 kHz and 900 kHz offset frequency from a 1.3 GHz center frequency is -102 dBc/Hz and -123 dBc, respectively. It consumes 10 mA at 2.7 V supply. Fabricated in 0.18 μm SiGe BiCMOS process with 78 GHz fT, the total chip area including VCO switch cap array is 360×700 μm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; Q-factor; UHF integrated circuits; UHF oscillators; cellular radio; circuit tuning; code division multiple access; integrated circuit noise; phase noise; semiconductor materials; switched capacitor networks; voltage-controlled oscillators; 0.18 micron; 1.0 to 1.7 GHz; 1.3 GHz; 10 mA; 2.7 V; 360 micron; 700 micron; 78 GHz; CDMA application; DCT AMPS application; SiGe; SiGe BiCMOS UHF VCO; SiGe BiCMOS process; VCO switch cap array; auto tuning; center frequency; chip area; coarse tuning; differential LC VCO; differential spiral inductor; fine tuning; offset frequency; phase noise; tank quality factor; tuning range; BiCMOS integrated circuits; Discrete cosine transforms; Frequency; Germanium silicon alloys; Multiaccess communication; Q factor; Silicon germanium; Switches; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320657
