Title :
Fabrication and characterization of a novel suspended-nanowire-channel thin-film transistor with nanometer air gap
Author :
Hsu, Chia-Wei ; Kuo, Chia-Hao ; Hsu, Hsing-Hui ; Lin, Horng-Chih ; Huang, Tiao-Yuan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, a novel suspended-NW-channel TFT was fabricated and characterized successfully. With the simple and low-cost over-etching-time-controlled RIE technique and a BOE wet etch process, the suspended NWs of 52 nm and an air gap of 100 nm is achieved. It is also found that the fabricated device with longer channel length and S/D extension length reduces the pull-in voltage and the hysteresis window.
Keywords :
etching; nanowires; thin film transistors; BOE wet etch process; channel length; fabrication; hysteresis window; nanometer air gap; over-etching-time-controlled RIE technique; pull-in voltage; size 52 nm; suspended-NW-channel TFT; suspended-nanowire-channel thin-film transistor; Etching; Fabrication; Hysteresis; Logic gates; Nanoscale devices; Silicon; Thin film transistors;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017356
