DocumentCode :
3281378
Title :
Terahertz conductivity of Si and of Ge/Si(001) heterostructures with quantum dots
Author :
Zhukova, E.S. ; Gorshunov, B.P. ; Prokhorov, A.S. ; Spektor, I.E. ; Goncharov, Yu.G. ; Arapkina, L.V. ; Chapnin, V.A. ; Kalinushkin, V.P. ; Mikhailova, G.N. ; Yuryev, V.A.
Author_Institution :
A.M. Prokhorov Gen. Phys. Inst., Moscow
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5 K - 300 K.
Keywords :
electrical conductivity; germanium; molecular beam epitaxial growth; semiconductor heterojunctions; semiconductor quantum dots; silicon; terahertz wave spectra; Ge-Si; MBE method; dielectric characteristics; dielectric properties; quantum dots; quasioptical terahertz-subterahertz coherent source BWO spectroscopy; semiconductor heterostructures; temperature dependence; terahertz conductivity; Conductivity; Dielectrics; Electrochemical impedance spectroscopy; Frequency; Germanium; Microscopy; Quantum dots; Semiconductivity; Silicon; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on
Conference_Location :
Pasadena, CA
Print_ISBN :
978-1-4244-2119-0
Electronic_ISBN :
978-1-4244-2120-6
Type :
conf
DOI :
10.1109/ICIMW.2008.4665871
Filename :
4665871
Link To Document :
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