A fully tunable large-signal linear MOS transconductor design using linear composite-MOSFETs

Author

Cheng, Michael C H ; Toumazou, Chris

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci. Technol. & Med., London, UK

Volume

6

fYear

1992

fDate

10-13 May 1992

Firstpage

2864

Abstract

The limitations of a general MOS differential pair transconductor architecture are briefly reviewed, and a tunable scheme for linear transconductance design which allows independent tuning of its transconductance and its output impedance simultaneously within the same cell is proposed. To implement this full tuning capability, a suitable circuit in MOS technology is the linear composite-MOSFET (COMFET) proposed by the authors (1991). Although the COMFET realization described is nonoptimum, it serves to demonstrate the principle

Keywords

electric admittance; insulated gate field effect transistors; tuning; COMFET; differential pair transconductor architecture; independent tuning; large-signal linear MOS transconductor; linear composite-MOSFETs; output impedance; Circuit optimization; Filters; Frequency; Impedance; Kirchhoff´s Law; Maintenance engineering; Threshold voltage; Transconductance; Transconductors; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.230653

Filename

230653