DocumentCode :
328153
Title :
Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Author :
Bach, H.-G. ; Umbach, A. ; Unterborsch, G. ; Passenberg, W. ; Mekonnen, G.G. ; Schlaak, W. ; Schramm, C. ; Ebert, W. ; Wolfram, P. ; Van Waasen, S. ; Bertenburg, R.M. ; Janssen, G. ; Reuter, R. ; Auer, U. ; Tegude, F.J.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Volume :
1
fYear :
1996
fDate :
19-19 Sept. 1996
Firstpage :
133
Abstract :
An InP-based photoreceiver OEIC with a bandwidth of 27 GHz is reported. The device consists of a pin-photodiode with integrated optical waveguide and a coplanar travelling wave amplifier being composed of four HEMTs.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical receivers; optical waveguides; p-i-n photodiodes; time division multiplexing; 27 GHz; GaInAs-AlInAs-InP; HEMT ICs; InP; InP-based photoreceiver OEIC; bandwidth; coplanar travelling wave amplifier; integrated optical waveguide; pin-photodiode; ultrafast GaInAs/AlInAs/InP photoreceiver; waveguide architecture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
Type :
conf
Filename :
713757
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=328153
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