Integration of triple-band GSM antenna switch module using SOI CMOS

Author

Bonkowski, James ; Kelly, Dylan

Author_Institution

Peregrine Semicond. Corp., Mundelein, IL, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

511

Lastpage

514

Abstract

An integrated triple-band GSM antenna switch module, fabricated in RF CMOS on a sapphire substrate, is presented in this paper. The low cost and compact size requirements in wireless and mobile communication systems motivate the continuing integration of the analog portions of the design. The antenna switch die incorporates a FET switch, transmit path filters, and all bias and control circuitry on the same substrate using a 0.5 μm CMOS process. A revised version of the die is also proposed, which makes use of an additional copper interconnect layer to reduce die area.

Keywords

CMOS integrated circuits; UHF antennas; cellular radio; integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; mobile antennas; mobile handsets; semiconductor switches; silicon-on-insulator; 0.5 micron; Al₂O₃; FET switch; RF CMOS; SOI CMOS; Si-Al₂O₃; analog design portion integration; antenna switch die; bias circuitry; control circuitry; copper interconnect layer; die area; integrated triple-band GSM antenna switch module; mobile communication systems; sapphire substrate; size requirements; transmit path filters; wireless communication systems; Communication switching; Costs; FETs; GSM; Mobile communication; Radio frequency; Switches; Switching circuits; Transmitting antennas; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320670

Filename

1320670