Title :
InAlGaAs/InAlAs quaternary well superlattice avalanche photodiodes (APDs)
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Two types of InAlGaAs quaternary well superlattice avalanche photodiodes have been developed. One is a polyimide-coated mesa structure with a high gain-bandwidth product of over 120 GHz and a low multiplied dark current of a few tens of nanoamperes. Its reliability has been measured to be over 10/sup 5/ hours at 50/spl deg/C. The other is a planar structure with a new titanium-implanted guard-ring, which should have a longer lifetime than the mesa structure.
Keywords :
avalanche photodiodes; life testing; optical receivers; semiconductor device reliability; semiconductor device testing; semiconductor quantum wells; 50 C; InAlGaAs; InAlGaAs quaternary well superlattice avalanche photodiodes; InAlGaAs-InAlAs; InAlGaAs/InAlAs quaternary well superlattice avalanche photodiodes; high gain-bandwidth product; low multiplied dark current; mesa structure; nanoamperes; planar structure; polyimide-coated mesa structure; reliability; titanium-implanted guard-ring;
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
