DocumentCode :
3281641
Title :
High dynamic range, high output power I/Q modulator in 50 GHz ft SiGe technology
Author :
Karthaus, U. ; Alomari, N. ; Bergmann, G. ; Schuhmacher, H.
Author_Institution :
Atmel, Heilbronn, Germany
fYear :
2004
fDate :
6-8 June 2004
Firstpage :
539
Lastpage :
542
Abstract :
This paper presents the design and measurement results of a high dynamic range quadrature modulator integrated in Atmel´s 50 GHz f1 SiGe foundry technology. An integrated differential cascode output amplifier boosts the output compression point to >14.3 dBm (3.5 Vpp diff. input referred) without sacrificing dynamic range. A three-stage polyphase filter provides high image rejection from 700 MHz to 2700 MHz.
Keywords :
Ge-Si alloys; UHF amplifiers; UHF filters; bipolar MMIC; modulators; semiconductor materials; 50 GHz; 700 to 2700 MHz; SiGe; UHF modulation; differential cascode output amplifier; high dynamic range modulator; high output power I/Q modulator; image rejection; microwave bipolar integrated circuits; multiple-stage polyphase filter; output compression point; quadrature modulator; 3G mobile communication; Dynamic range; Filters; Foundries; Germanium silicon alloys; Linearity; Multiaccess communication; Power generation; Radiofrequency amplifiers; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-8333-8
Type :
conf
DOI :
10.1109/RFIC.2004.1320677
Filename :
1320677
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3281641
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