A. 5-GHz high-linear SiGe HBT up-converter with on-chip output balun

Author

Italia, Alessandro ; Ragonese, Egidio ; La Paglia, Luca ; Palmisano, Giuseppe

Author_Institution

Facolta di Ingegneria, Catania Univ., Italy

fYear

2004

fDate

6-8 June 2004

Firstpage

543

Lastpage

546

Abstract

This paper presents a high-linearity monolithic up-converter for 5-GHz wireless LAN applications. The circuit, implemented in a 40-GHz-f_T SiGe HBT technology, includes a variable-gain amplifier (VGA) and a double balanced mixer. By using an integrated balun at the RF output, the up-converter guarantees an output 1-dB compression point (OCP1) of 4 dBm, while drawing a quiescent current as low as 34 mA from a 3-V power supply. A power gain of 11 dB is also achieved. Moreover, a digital control is included, providing a linear-in-dB gain characteristic with a 45-dB power gain range.

Keywords

Ge-Si alloys; MMIC amplifiers; MMIC frequency convertors; MMIC mixers; baluns; bipolar integrated circuits; gain control; heterojunction bipolar transistors; semiconductor materials; wireless LAN; 11 dB; 3 V; 34 mA; 40 GHz; 5 GHz; HBT technology; SiGe; VGA; digital gain control; double balanced mixer; high-linearity up-converter; on-chip output balun; variable-gain amplifier; wireless LAN; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Integrated circuit technology; Power supplies; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320678

Filename

1320678