DocumentCode
328173
Title
High performance laser diode integrated with monitoring photodiode (LD+PD) fabricated with the precisely controlled dry etching technique
Author
Shiba, T. ; Funaba, S. ; Nakayama, T. ; Ishimura, E. ; Takagi, K. ; Sakaino, T. ; Aoyagi, T. ; Nagahama, K. ; Aiga, M.
Author_Institution
Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan
Volume
5
fYear
1996
fDate
19-19 Sept. 1996
Firstpage
75
Abstract
The dry etching technique is applied to fabricate the facets of LD+PD. Roughness and tilted angle of the etched facets are /spl plusmn/4 nm and 1 deg. respectively. Current of the LD+PD is 6.5 mA. The aging test demonstrates stable operation of the device.
Keywords
etching; integrated optics; laser stability; life testing; monitoring; optical testing; optical transmitters; photodiodes; semiconductor device testing; semiconductor lasers; surface topography; 6.5 mA; aging tes; etched facets; high performance laser diode integration; monitoring photodiode; optical fabrication; optical modules; optical transmitters; precisely controlled dry etching technique; roughness; stable operation; tilted angle;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location
Oslo, Norway
Print_ISBN
82-423-0418-1
Type
conf
Filename
713796
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