DocumentCode :
3281748
Title :
BiCMOS process design for mixed-signal applications
Author :
Scharf, Brad
Author_Institution :
Analog Devices Semicond., Wilmington, MA, USA
Volume :
6
fYear :
1992
fDate :
10-13 May 1992
Firstpage :
2683
Abstract :
Mixed-signal BiCMOS processes must provide for higher-voltage operation and diverse components to support a fragmented market. Most BiCMOS processes have evolved from an existing core 5V CMOS technology. The impact on process design of extending the voltage range and adding analog components is described. The ABCMOS-2 process, whose device cross-sections are shown, is used to illustrate the effects. Its major performance parameters are summarized, and components and future trends are considered
Keywords :
BiCMOS integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; ABCMOS-2 process; BiCMOS process design; mixed-signal applications; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Isolation technology; MOS capacitors; MOSFETs; Process design; Signal to noise ratio; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0593-0
Type :
conf
DOI :
10.1109/ISCAS.1992.230667
Filename :
230667
Link To Document :
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