DocumentCode
3281748
Title
BiCMOS process design for mixed-signal applications
Author
Scharf, Brad
Author_Institution
Analog Devices Semicond., Wilmington, MA, USA
Volume
6
fYear
1992
fDate
10-13 May 1992
Firstpage
2683
Abstract
Mixed-signal BiCMOS processes must provide for higher-voltage operation and diverse components to support a fragmented market. Most BiCMOS processes have evolved from an existing core 5V CMOS technology. The impact on process design of extending the voltage range and adding analog components is described. The ABCMOS-2 process, whose device cross-sections are shown, is used to illustrate the effects. Its major performance parameters are summarized, and components and future trends are considered
Keywords
BiCMOS integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; ABCMOS-2 process; BiCMOS process design; mixed-signal applications; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Isolation technology; MOS capacitors; MOSFETs; Process design; Signal to noise ratio; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-0593-0
Type
conf
DOI
10.1109/ISCAS.1992.230667
Filename
230667
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