DocumentCode :
3281761
Title :
A novel DP4T antenna switch for dual-band WLAN applications
Author :
Lee, Chang-Ho ; Banerjee, Bhaskar ; Laskar, Joy
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2004
fDate :
6-8 June 2004
Firstpage :
571
Lastpage :
574
Abstract :
In this paper, we present a novel DP4T antenna switch with very simple control logic and high power handling capabilities for dual-band WLAN applications. The suggested DP4T switch architecture requires only two control lines. The developed DP4T switch exhibits 1.2 to 1.7 dB of insertion loss, and 27/53 dB to 23/37 dB of isolation at 2.4 GHz and 5.25 GHz, respectively. It also demonstrates 31 dBm of input P0.1dB, 35 dBm of input P1dB in 3/0 V operation, as well as better than -62 dBc of 2nd harmonics and -73 dBc of 3rd harmonics response, respectively. The MMICs are developed in a commercial 0.25-μm GaAs pHEMT process. This switch architecture is preferable for Si-based processes because substrate vias are not required due to its generic topology. To the best of our knowledge, this is the first report on a DP4T RF switch architecture with very simple control logic for dual-band WLAN applications.
Keywords :
HEMT integrated circuits; III-V semiconductors; antenna accessories; field effect MMIC; gallium arsenide; microwave switches; power semiconductor switches; wireless LAN; 0.25 micron; 1.2 to 1.7 dB; 2.4 GHz; 3 V; 5.25 GHz; DP4T antenna switch; GaAs; MMIC; RF switch matrix; dual-band WLAN; high power switches; insertion loss; isolation; microwave switches; pHEMT process; switch control logic; Dual band; Gallium arsenide; Insertion loss; Logic; MMICs; PHEMTs; Radio frequency; Switches; Topology; Wireless LAN;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-8333-8
Type :
conf
DOI :
10.1109/RFIC.2004.1320685
Filename :
1320685
Link To Document :
بازگشت