Title :
A low power Ka-band SiGe HBT VCO using line inductors
Author :
Chen, Yi-Jan Emery ; Kuo, Wei-Min Lance ; Lee, Jongsoo ; Cressler, John D. ; Laskar, Joy ; Freeman, Greg
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
An integrated low power, low phase noise Ka-band differential voltage-controlled oscillator (VCO) is developed in a 0.12-μm 200 GHz SiGe HBT technology. The use of line inductors instead of transmission lines is demonstrated to be feasible in LC-tuned resonators for Ka-band applications. The VCO operates on 1.6 V and dissipates 3.7 mW of power. A phase noise of -99 dBc/Hz at 1 MHz offset from the carrier frequency of 33 GHz is achieved, together with a VCO figure-of-merit of -183.7 dBc/Hz.
Keywords :
Ge-Si alloys; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; inductors; low-power electronics; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; 0.12 micron; 1.6 V; 200 GHz; 3.7 mW; 33 GHz; HBT VCO; LC-tuned resonators; SiGe; VCO figure-of-merit; differential voltage-controlled oscillator; line inductors; low phase noise VCO; low power Ka-band VCO; Design engineering; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Integrated circuit technology; Phase noise; Power engineering and energy; Power transmission lines; Silicon germanium; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320689
