Experimental verification of the effect of carrier heating on channel noise in deep submicron NMOSFETs by substrate bias

Author

Wang, Hong ; Zeng, Rong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2004

fDate

6-8 June 2004

Firstpage

599

Lastpage

602

Abstract

RF noise in 0.18 μm NMOSFETs has been characterized, concerning the contribution of carrier heating and hot carrier effects on channel noise. The role of carrier heating and hot carrier effects on the excess thermal noise observed in short channel MOSFETs is assessed via a novel approach that modulates the channel carrier heating and number of hot carriers using substrate bias. The experimental evidence shown in this study indicates that the hot carrier effect does not show too much impact on the channel noise of deep submicron MOSFETs.

Keywords

MOSFET; hot carriers; semiconductor device measurement; semiconductor device noise; thermal noise; 0.18 micron; RF noise; carrier heating; channel noise; deep submicron NMOSFET; hot carrier effect; semiconductor device noise; short channel MOSFET; substrate bias modulation method; thermal noise; CMOS technology; Circuit noise; Heating; Hot carrier effects; Hot carriers; MOS devices; MOSFETs; Noise measurement; Radio frequency; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320692

Filename

1320692