Title :
Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTs
Author :
Niu, Guofu ; Xia, Kejun ; Sheridan, David ; Harame, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
This work presents experimental extraction of intrinsic base and collector current noise of SiGe HBTs as well as their correlation. Using the extraction results, several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, and the transport noise model. Connections and differences between various models are discussed.
Keywords :
Ge-Si alloys; SPICE; electric noise measurement; equivalent circuits; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; semiconductor materials; HBT; RF noise modeling; SPICE; SiGe; Van Vliet model; base current noise; collector current noise; equivalent circuit; noise model correlation; parameter extraction; transport noise model; Circuit noise; Current measurement; Equivalent circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Radio frequency; SPICE; Scattering parameters; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320696
