A simple systematic procedure of Si-based spiral inductor design

Author

Lee, Chih-Yuan ; Chen, Tung-Sheng ; Kao, Chin-Hsing ; Deng, Joseph Der-Sheng ; Yen, Chuan-Chang ; Lee, Yu-Kuo ; Kuo, Jung-Ching ; Chang, Jui-Fu ; Huang, Guo-Wei ; Chen, Kun-Ming ; Duh, Ting-Shien

Author_Institution

Semicond. Lab., Chung Cheng Inst. of Technol., Taoyuan, Taiwan

fYear

2004

fDate

6-8 June 2004

Firstpage

619

Lastpage

622

Abstract

In this paper, a systematic design procedure, based on Q-curve analysis, and the corresponding high-Q inductor design guidelines have been proposed. Based on the presented guidelines, a phenomenal Q-value increment as high as 122% in 4 nH spiral inductors has been realized by a technique which combines an optimized poly shielding layer and proton implantation treatment. The technique is a promising solution to put inductors on silicon substrates with satisfactory performance for Si-based RFIC applications.

Keywords

Q-factor; equivalent circuits; inductors; ion implantation; optimisation; radiofrequency integrated circuits; Q-curve analysis; RFIC; Si; high-Q inductor; optimized poly shielding layer; parallel equivalent circuit model; proton implantation treatment; spiral inductor design; Guidelines; Implants; Inductance; Inductors; Protons; Q factor; Radio frequency; Radiofrequency integrated circuits; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320697

Filename

1320697