Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design

Author

Huo, X. ; Chen, Kevin J. ; Luong, Howard ; Chan, Philip C.H.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2004

fDate

6-8 June 2004

Firstpage

627

Lastpage

630

Abstract

A physical based lumped element model is developed for lossy silicon substrates, considering both electric loss and eddy current loss induced by the substrate. A simplified ladder structure is used to accurately model the skin effect of the high conductivity silicon substrate. Good agreement with a full wave solver is obtained for inductors on different resistivity silicon substrates.

Keywords

absorbing media; eddy current losses; elemental semiconductors; equivalent circuits; inductors; lumped parameter networks; silicon; skin effect; substrates; transformers; Si; eddy current loss; equivalent circuit; high conductivity silicon substrate; ladder structure; lossy silicon substrate modeling; on-chip inductors; on-chip transformers; physical based lumped element model; resistivity; skin effect; substrate electric loss; Capacitance; Conductivity; Dielectric losses; Dielectric substrates; Eddy currents; Frequency; Inductors; Silicon; Skin effect; Transformers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320699

Filename

1320699