DocumentCode :
3282050
Title :
Accurate modeling of lossy silicon substrate for on-chip inductors and transformers design
Author :
Huo, X. ; Chen, Kevin J. ; Luong, Howard ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear :
2004
fDate :
6-8 June 2004
Firstpage :
627
Lastpage :
630
Abstract :
A physical based lumped element model is developed for lossy silicon substrates, considering both electric loss and eddy current loss induced by the substrate. A simplified ladder structure is used to accurately model the skin effect of the high conductivity silicon substrate. Good agreement with a full wave solver is obtained for inductors on different resistivity silicon substrates.
Keywords :
absorbing media; eddy current losses; elemental semiconductors; equivalent circuits; inductors; lumped parameter networks; silicon; skin effect; substrates; transformers; Si; eddy current loss; equivalent circuit; high conductivity silicon substrate; ladder structure; lossy silicon substrate modeling; on-chip inductors; on-chip transformers; physical based lumped element model; resistivity; skin effect; substrate electric loss; Capacitance; Conductivity; Dielectric losses; Dielectric substrates; Eddy currents; Frequency; Inductors; Silicon; Skin effect; Transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
ISSN :
1529-2517
Print_ISBN :
0-7803-8333-8
Type :
conf
DOI :
10.1109/RFIC.2004.1320699
Filename :
1320699
Link To Document :
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