Technique for preparing defect-free high aspect ratio SU-8 resist structure using x-ray lithography

This paper describes a process of deep x-ray lithography (DXRL) using epoxy negative photoresist SU-8. Resist coating, soft bake, exposure dose, post exposure bake (PEB), and development of the resist are characterized. The negative resist SU-8 has been increasingly used in microand nanotechnologies due to its excellent coating and processing properties as well as its mechanical and chemical stability. A fabrication of polymer based high aspect ratio (HAR) micro-channel structure is investigated by x-ray lithography system.