A fully integrated Q-enhanced LC filter with 6 dB noise figure at 2.5 GHz in SOI

Author

He, Xin ; Kuhn, William B.

Author_Institution

Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA

fYear

2004

fDate

6-8 June 2004

Firstpage

643

Lastpage

646

Abstract

Q-enhanced LC filter technology offers a promising approach to remove the off-chip preselect filter still required in current transceivers. To date, previous designs fail to meet the stringent system specifications such as dynamic range and noise figure for existing wireless receivers. This paper presents an innovative prototype design targeted at Bluetooth in silicon-on-insulator (SOI) process. Drawing 5 mA from a 3 V supply, it achieves 17 dB voltage gain, approximately 6 dB noise figure, 153 dB 1-dB compression point dynamic range relative to 1 Hz bandwidth, and 70 MHz bandwidth at 2.5 GHz, suitable for industry applications.

Keywords

Bluetooth; Q-factor; UHF filters; band-pass filters; radiofrequency integrated circuits; silicon-on-insulator; transceivers; 2.5 GHz; 3 V; 5 mA; 6 dB; 70 MHz; Bluetooth; Q-enhanced integrated LC filter; SOI; SOS; bandpass filters; compression point dynamic range; dynamic range; high bulk resistivity; high-Q inductors; noise figure; on-chip high-Q filter; silicon-on-insulator process; silicon-on-sapphire; transceivers; wireless communication network; Bandwidth; Bluetooth; Dynamic range; Filters; Gain; Noise figure; Prototypes; Silicon on insulator technology; Transceivers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8333-8

Type

conf

DOI

10.1109/RFIC.2004.1320703

Filename

1320703