Title :
A fully integrated Q-enhanced LC filter with 6 dB noise figure at 2.5 GHz in SOI
Author :
He, Xin ; Kuhn, William B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
Abstract :
Q-enhanced LC filter technology offers a promising approach to remove the off-chip preselect filter still required in current transceivers. To date, previous designs fail to meet the stringent system specifications such as dynamic range and noise figure for existing wireless receivers. This paper presents an innovative prototype design targeted at Bluetooth in silicon-on-insulator (SOI) process. Drawing 5 mA from a 3 V supply, it achieves 17 dB voltage gain, approximately 6 dB noise figure, 153 dB 1-dB compression point dynamic range relative to 1 Hz bandwidth, and 70 MHz bandwidth at 2.5 GHz, suitable for industry applications.
Keywords :
Bluetooth; Q-factor; UHF filters; band-pass filters; radiofrequency integrated circuits; silicon-on-insulator; transceivers; 2.5 GHz; 3 V; 5 mA; 6 dB; 70 MHz; Bluetooth; Q-enhanced integrated LC filter; SOI; SOS; bandpass filters; compression point dynamic range; dynamic range; high bulk resistivity; high-Q inductors; noise figure; on-chip high-Q filter; silicon-on-insulator process; silicon-on-sapphire; transceivers; wireless communication network; Bandwidth; Bluetooth; Dynamic range; Filters; Gain; Noise figure; Prototypes; Silicon on insulator technology; Transceivers; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320703
