• DocumentCode
    3282245
  • Title

    Single crystal CVD diamonds as sensors for heavy ion spectroscopy

  • Author

    Potenza, R. ; Tuve, C.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Catania, Catania, Italy
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    509
  • Lastpage
    512
  • Abstract
    High purity diamonds obtained from carbon vapor deposition (CVD) on silicon backing show a lot of reticular defects which produce low energy resolution and low electric signals under bombardment with nuclear particles. The problem can be overcome allowing CVD diamonds to grow on suitable low cost diamond backings: e.g. HPHT diamond pieces. Diamond crystal 100 microns thick, grown with this new technique in Roma - Tor Vergata, Italy, laboratories, have been studied in Catania University and INFN laboratories. We used them as detectors of nuclear radiations. Under the bombardment with protons and alpha particles of 3 MeV and 6Li ions and 12C ions of up to 8 MeV/nucleon they showed an energy resolution similar to that of silicon detectors of comparable size and an efficiency for charge collection at electrodes of about 100%. So they can be recommended as detectors for nuclear spectroscopy in high radiation background, as e.g. for 0 degrees measurements in double charge exchange reactions.
  • Keywords
    charge exchange; chemical vapour deposition; diamond; proton effects; radiation detection; silicon; C; alpha particles bombardment; carbon vapor deposition; double charge exchange reaction; electron volt energy 3 MeV; heavy ion spectroscopy; high purity diamonds; high radiation background; ion bombardment; nuclear radiation detectors; nuclear spectroscopy; proton bombardment; reticular defects; silicon backing; single crystal CVD diamonds; Alpha particles; Chemical vapor deposition; Costs; Diamond-like carbon; Energy resolution; Laboratories; Protons; Radiation detectors; Silicon; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398289
  • Filename
    5398289