Title :
Design, fabrication, and preliminary test of mutil-layers nano resonant tunneling film gyroscope
Author :
Liu, Jun ; Du, Kang ; Li, Mengwei ; Shi, Yunbo
Author_Institution :
Nat. Key Lab. for Electron. Meas. Technol., Taiyuan, China
Abstract :
A novel structure MEMS gyroscope using the multi-layers nano resonant tunneling film with meso-piezoresistive effect is introduced in this paper. According to the theory of drive and detection, the folding-type orthogonal beam structure is designed, and the simulation of ANSYS proves that the structure does not only meet the drive approach, but also meets the detection conditions. This kind of gyroscope has been fabricated by GaAs IC surface processes and control hole etching technology. The Wheatstone bridge circuit with negative differential resistance of RTD is established to detect the change of stress at the base of detection beam. According to the experiment results, the I-V characteristics of RTDs are changed obviously in the role of stress, and prove that the detection beam based on RTD is feasible.
Keywords :
III-V semiconductors; aluminium compounds; beams (structures); detector circuits; electrical resistivity; etching; gallium arsenide; gyroscopes; indium compounds; microsensors; multilayers; nanosensors; piezoresistance; resonant tunnelling diodes; thin film sensors; ANSYS; GaAs-In0.1Ga0.9As-AlAs; I-V characteristics; MEMS gyroscope; RTD; Wheatstone bridge circuit; folding-type orthogonal beam structure; hole etching; mesopiezoresistive effect; multilayer nanoresonant tunneling film; negative differential resistance; resonant tunneling diodes; stress change; Circuit simulation; Fabrication; Gallium arsenide; Gyroscopes; Micromechanical devices; Process control; Resonant tunneling devices; Stress; Surface resistance; Testing;
Conference_Titel :
Sensors, 2009 IEEE
Conference_Location :
Christchurch
Print_ISBN :
978-1-4244-4548-6
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2009.5398293
