Title :
An efficient THz source with a tuning range of 71.1-2830 /spl mu/m (0.106-4.22 THz) based on frequency mixing in a GaP crystal
Author :
Ding, Yujie J. ; Shi, Wei
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
The authors present the result of efficiently producing the THz radiations by using collinear phase-matched difference-frequency generation (DFG) in a GaP crystal. The authors have extended the THz output wavelengths to as long as 2830 mum. In addition, the peak power has reached 15.6 W. Since GaP is a cubic crystal, there is no need to rotate this in order to tune the output wavelength in a wide range. The two mixing beams used for the DFG experiments were an idler beam (0.73-1.8 mum) from a BBO-based master oscillator/power oscillator pumped by a frequency-tripled Nd:YAG laser and a Nd:YAG laser beam (1.064 mum) with the pulse width of 10 ns. A GaP crystal with a dimension of 19.9 mm along [001] and 25 mm times 25 mm for the cross section was used
Keywords :
III-V semiconductors; barium compounds; gallium compounds; neodymium; optical frequency conversion; submillimetre wave devices; submillimetre waves; yttrium compounds; 0.106 to 4.22 THz; 0.73 to 1.8 micron; 1.064 micron; 10 ns; 15.6 W; 71.1 to 2830 micron; BBO; BBO-based master oscillator; BaB2O4; GaP; GaP crystal; Nd:Y3Al5O12; Nd:YAG laser; THz source; collinear phase-matched difference-frequency generation; frequency mixing; idler beam; power oscillator; tuning range; Absorption; Crystals; Frequency conversion; Laser beams; Laser excitation; Laser tuning; Nonlinear optics; Optical frequency conversion; Polarization; Power generation;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1595946