مرکز منطقه ای اطلاع رساني علوم و فناوري - Growth, fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As/InAs0.3P0.7 composite channel HEMTs

DocumentCode :

3282416

Title :

Growth, fabrication and characterization of In_0.52Al_0.48As/In_0.53Ga_0.47As/InAs_0.3P_0.7 composite channel HEMTs

Author :

Liu, Dongmin ; Hudait, Mantu ; Lin, Yong ; Kim, Hyeongnam ; Ringel, Steven A. ; Lu, Wu

fYear :

2005

fDate :

Dec. 7-9, 2005

Firstpage :

Lastpage :

Keywords :

Electrons; Fabrication; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Plasma confinement; Voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Semiconductor Device Research Symposium, 2005 International

Print_ISBN :

1-4244-0083-X

Type :

conf

DOI :

10.1109/ISDRS.2005.1595950

Filename :

1595950

Link To Document :