DocumentCode :
3282464
Title :
Scaling Rules for Tunnel Field-Effect Transistors
Author :
Bhuwalka, Krishna K. ; Born, Mathias ; Schindler, Markus ; Eisele, Ignaz
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
13
Lastpage :
14
Keywords :
Degradation; Equations; FETs; Leakage current; MOSFETs; P-i-n diodes; Photonic band gap; Predictive models; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595952
Filename :
1595952
Link To Document :
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