3282621

An Accurate Model of the C-V Characteristic due to Quantum Mechanical Effects for the Surrounding Gate Transistor

Haneda, Hideo ; Sakamoto, Wataru ; Pesic, Iliya I. ; Nakamura, Hiroki ; Sakuraba, Hiroshi ; Masuoka, Fujio

2005

Dec. 7-9, 2005

34

35

Analytical models; Capacitance-voltage characteristics; Educational institutions; Effective mass; Electrons; MOS capacitors; MOS devices; MOSFETs; Quantum mechanics; Silicon;

English

ieee

Semiconductor Device Research Symposium, 2005 International

1-4244-0083-X

conf

10.1109/ISDRS.2005.1595963

1595963