DocumentCode :
3282674
Title :
Breaking the Theoretical Limit of SiC Unipolar Power Device - a Simulation Study
Author :
Yu, L.C. ; Sheng, K.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
42
Lastpage :
43
Keywords :
Computational modeling; Doping; MOSFET circuits; Power engineering and energy; Power engineering computing; Power semiconductor devices; Semiconductor materials; Silicon carbide; Structural engineering; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595967
Filename :
1595967
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3282674
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