Title :
A Novel Tri-Control Gate Surrounding Gate Transistor (TCG-SGT) Flash Memory Cell
Author :
Ohba, Takuya ; Nakamura, Hiroki ; Sakuraba, Hiroshi ; Masuoka, Fujio
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
Abstract :
In this paper, the authors have proposed the novel TCG-SGT flash memory cell. In addition, the authors have derived the capacitive-coupling ratio and, through process simulation, have proposed a fabrication process for the device. It is obvious that the TCG-SGT memory cell produces a coupling ratio that is exceptionally higher than conventional flash memory cells, making it suitable for future high-density flash memory
Keywords :
flash memories; transistors; capacitive-coupling ratio; flash memory cell; high-density flash memory; tri-control gate surrounding gate transistor; Capacitance; Educational institutions; Fabrication; Flash memory; Flash memory cells; Memory architecture; Nonvolatile memory; Silicon; Substrates; Thickness control;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1595970
