• DocumentCode
    3282700
  • Title

    A Novel Tri-Control Gate Surrounding Gate Transistor (TCG-SGT) Flash Memory Cell

  • Author

    Ohba, Takuya ; Nakamura, Hiroki ; Sakuraba, Hiroshi ; Masuoka, Fujio

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
  • fYear
    2005
  • fDate
    7-9 Dec. 2005
  • Firstpage
    48
  • Lastpage
    49
  • Abstract
    In this paper, the authors have proposed the novel TCG-SGT flash memory cell. In addition, the authors have derived the capacitive-coupling ratio and, through process simulation, have proposed a fabrication process for the device. It is obvious that the TCG-SGT memory cell produces a coupling ratio that is exceptionally higher than conventional flash memory cells, making it suitable for future high-density flash memory
  • Keywords
    flash memories; transistors; capacitive-coupling ratio; flash memory cell; high-density flash memory; tri-control gate surrounding gate transistor; Capacitance; Educational institutions; Fabrication; Flash memory; Flash memory cells; Memory architecture; Nonvolatile memory; Silicon; Substrates; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Conference_Location
    Bethesda, MD
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1595970
  • Filename
    1595970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3282700