Title :
Study of silicon nitride film embedded with silicon quantum dots
Author :
Li, Pei Ling ; Gau, Chie ; Dai, Bau Tong ; Liu, Chien Wei
Author_Institution :
Inst. of Aeronaut. & Astronaut., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.
Keywords :
CVD coatings; annealing; chemical vapour deposition; quantum dots; PECVD deposition program; silicon quantum dots; silicon rich nitride film; sufficient annealed time; thermal annealing condition; Annealing; Films; Morphology; Nanocrystals; Quantum dot lasers; Quantum dots; Silicon; PECVD; silicon quantum dots; thermal annealed;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017438
