DocumentCode
3282839
Title
Study of silicon nitride film embedded with silicon quantum dots
Author
Li, Pei Ling ; Gau, Chie ; Dai, Bau Tong ; Liu, Chien Wei
Author_Institution
Inst. of Aeronaut. & Astronaut., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear
2011
fDate
20-23 Feb. 2011
Firstpage
646
Lastpage
649
Abstract
This study report the silicon quantum dots that precipitate from silicon rich nitride films by thermal annealed. We examined various annealing conditions on silicon rich nitride films that deposited in the same PECVD deposition program. We could find the sample that went through high annealed temperature and sufficient annealed time, such as annealed at 1000°C for 1 hour, would get better dots size at about 5 nm.
Keywords
CVD coatings; annealing; chemical vapour deposition; quantum dots; PECVD deposition program; silicon quantum dots; silicon rich nitride film; sufficient annealed time; thermal annealing condition; Annealing; Films; Morphology; Nanocrystals; Quantum dot lasers; Quantum dots; Silicon; PECVD; silicon quantum dots; thermal annealed;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location
Kaohsiung
Print_ISBN
978-1-61284-775-7
Type
conf
DOI
10.1109/NEMS.2011.6017438
Filename
6017438
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