DocumentCode :
3282915
Title :
Three region Hetero-Material Gate Oxide Stack (TMGOS) Epi-MOSFET: A new device structure for reduced short channel effects
Author :
Goel, Kirti ; Saxena, Manoj ; Gupta, Mridula ; Gupta, R.S.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
72
Lastpage :
73
Keywords :
Analytical models; Boundary conditions; Educational institutions; Electric variables control; Electrons; Laboratories; Leakage current; MOSFETs; Semiconductor devices; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595983
Filename :
1595983
Link To Document :
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