DocumentCode
3282915
Title
Three region Hetero-Material Gate Oxide Stack (TMGOS) Epi-MOSFET: A new device structure for reduced short channel effects
Author
Goel, Kirti ; Saxena, Manoj ; Gupta, Mridula ; Gupta, R.S.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
72
Lastpage
73
Keywords
Analytical models; Boundary conditions; Educational institutions; Electric variables control; Electrons; Laboratories; Leakage current; MOSFETs; Semiconductor devices; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1595983
Filename
1595983
Link To Document