DocumentCode :
3282958
Title :
Selective epitaxial growth of Boron-doped SiGe-structures with LPCVD
Author :
Schindler, M. ; Stimpel-Lindner, T. ; Eisele, I. ; Taylor, W.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
78
Lastpage :
79
Keywords :
Atomic force microscopy; Boron; Conductivity; Epitaxial growth; Germanium silicon alloys; Hydrogen; Lattices; Silicon germanium; Temperature; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595986
Filename :
1595986
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3282958
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