DocumentCode :
3282993
Title :
New Excimer Laser Annealing Process for Single-Crystal 3-D Stacked Thin-Film Transistors
Author :
Xianyu, Wenxu ; Yin, Huaxiang ; Cho, Hans S. ; Zhang, Xiaoxin ; Noguchi, Takashi
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
82
Lastpage :
83
Keywords :
Annealing; Crystallization; Epitaxial growth; Insulation; Pulsed laser deposition; Semiconductor films; Silicon on insulator technology; Substrates; Temperature; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595988
Filename :
1595988
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3282993
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