One-Dimensional Sub-Threshold Model for Symmetric Double-Gate MOSFETs

A one-dimensional (1-D) surface potential based sub-threshold model for symmetric double-gate MOSFET (DG MOSFET) is proposed. The model provides useful insight into the device behaviour. The proposed model shows good agreement with the two-dimensional (2-D) numerical simulation results for sub-threshold current, sub-threshold swing, threshold voltage roll-off and drain induced barrier lowering. The model is able to predict the behavior of the device as the oxide thickness is scaled. In this paper we have modeled the sub-threshold behavior of symmetric DG MOSFET by applying Gauss´s law. The model is restricted to sub-threshold region for symmetric DG MOSFET. Mid-gap gates (Taur, 2000) are considered and mobile charge carriers are neglected