DocumentCode :
3283158
Title :
Effects of Channel Doping Profile on Electrical Characteristics of Impact Ionization MOS
Author :
Hwang, Sang Joon ; Yoon, Jee-Young ; Kang, Ey Goo ; Sung, Man Young
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
103
Lastpage :
104
Keywords :
Doping profiles; Electric variables; Impact ionization; MOSFETs; Power dissipation; Power engineering and energy; Subthreshold current; Temperature; Thermal conductivity; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595999
Filename :
1595999
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3283158
بازگشت