Title :
Investigation of Gate Tunnelling Leakage Current in a Novel Fully Depleted SOI MOSFET with a Thin Oxide
Author :
Fathi, Ehsanollah ; Farbiz, Farzan ; Mortazavi, Yousof ; Fathipour, Morteza
Keywords :
Capacitance; Computer industry; Gate leakage; Hot carrier injection; Leakage current; MOSFET circuits; Silicon; Substrate hot electron injection; Tunneling; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596000
